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Electron g-factor study in Ga1-xInxAsySb1-y-GaSb and GaSb-Ga1-xInxAsySb1-y-GaSb quaternary alloy semiconductor spherical quantum dots

Identifieur interne : 003006 ( Main/Repository ); précédent : 003005; suivant : 003007

Electron g-factor study in Ga1-xInxAsySb1-y-GaSb and GaSb-Ga1-xInxAsySb1-y-GaSb quaternary alloy semiconductor spherical quantum dots

Auteurs : RBID : Pascal:11-0473291

Descripteurs français

Pascal (Inist)
- Facteur g, Composition chimique, Niveau Landau, Interaction spin orbite, Modèle masse effective, Bande valence, Décomposition niveau énergie, Etat spin, Effet champ magnétique, Gallium Indium Arsénioantimoniure Mixte, Composé quaternaire, Antimoniure de gallium, Point quantique, Particule sphérique, Semiconducteur, GaSb.

English descriptors

KwdEn :
- Chemical composition, Effective mass model, Energy-level splitting, Gallium Indium Antimonides arsenides Mixed, Gallium antimonides, Landau levels, Magnetic field effects, Quantum dots, Quaternary compounds, Semiconductor materials, Spherical particle, Spin state, Spin-orbit interactions, Valence bands, g-factor.

Abstract

Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga_1-xIn_xAs_ySb_1-y-GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga_1-xIn_xAs_ySb_1-y-GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k.p mixing between the conduction band Γ^c₆ and the valence bands Γ^v₈ and Γ^v₇ states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga_1-xIn_xAs_vSb_1-y-GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.

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Pascal:11-0473291

Le document en format XML

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In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb and GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb quaternary alloy semiconductor spherical quantum dots</title>
<author><name sortKey="Sanchez Cano, R" uniqKey="Sanchez Cano R">R. Sanchez-Cano</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidad Autónoma de Occidente</s1>
<s2>AA 2790 Cali</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Colombie</country>
<wicri:noRegion>AA 2790 Cali</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Porras Montenegro, N" uniqKey="Porras Montenegro N">N. Porras-Montenegro</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física, Universidad del Valle</s1>
<s2>AA 25360 Cali</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
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<country>Colombie</country>
<wicri:noRegion>AA 25360 Cali</wicri:noRegion>
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<date when="2011">2011</date>
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<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term>
<term>Effective mass model</term>
<term>Energy-level splitting</term>
<term>Gallium Indium Antimonides arsenides Mixed</term>
<term>Gallium antimonides</term>
<term>Landau levels</term>
<term>Magnetic field effects</term>
<term>Quantum dots</term>
<term>Quaternary compounds</term>
<term>Semiconductor materials</term>
<term>Spherical particle</term>
<term>Spin state</term>
<term>Spin-orbit interactions</term>
<term>Valence bands</term>
<term>g-factor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Facteur g</term>
<term>Composition chimique</term>
<term>Niveau Landau</term>
<term>Interaction spin orbite</term>
<term>Modèle masse effective</term>
<term>Bande valence</term>
<term>Décomposition niveau énergie</term>
<term>Etat spin</term>
<term>Effet champ magnétique</term>
<term>Gallium Indium Arsénioantimoniure Mixte</term>
<term>Composé quaternaire</term>
<term>Antimoniure de gallium</term>
<term>Point quantique</term>
<term>Particule sphérique</term>
<term>Semiconducteur</term>
<term>GaSb</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k.p mixing between the conduction band Γ<sup>c</sup>
<sub>6</sub>
 and the valence bands Γ<sup>v</sup>
<sub>8</sub>
 and Γ<sup>v</sup>
<sub>7</sub>
 states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>v</sub>
Sb<sub>1-y</sub>
-GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Electron g-factor study in Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb and GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb quaternary alloy semiconductor spherical quantum dots</s1>
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<fA14 i1="01"><s1>Departamento de Fisica, Universidad Autónoma de Occidente</s1>
<s2>AA 2790 Cali</s2>
<s3>COL</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Departamento de Física, Universidad del Valle</s1>
<s2>AA 25360 Cali</s2>
<s3>COL</s3>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>y</sub>
Sb<sub>1-y</sub>
-GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k.p mixing between the conduction band Γ<sup>c</sup>
<sub>6</sub>
 and the valence bands Γ<sup>v</sup>
<sub>8</sub>
 and Γ<sup>v</sup>
<sub>7</sub>
 states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga<sub>1-x</sub>
In<sub>x</sub>
As<sub>v</sub>
Sb<sub>1-y</sub>
-GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.</s0>
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<fC02 i1="01" i2="3"><s0>001B70C21L</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Chemical composition</s0>
<s5>03</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Landau levels</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Interaction spin orbite</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Spin-orbit interactions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Modèle masse effective</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Effective mass model</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Modelo masa efectiva</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Bande valence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Valence bands</s0>
<s5>07</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Energy-level splitting</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Etat spin</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Spin state</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Estado espín</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Effet champ magnétique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Magnetic field effects</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Arsénioantimoniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Antimonides arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Antimoniuro arseniuro Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>14</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Antimoniure de gallium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium antimonides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Particule sphérique</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Spherical particle</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Partícula esférica</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>325</s1>
</fN21>
</pA>
</standard>
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Electron g-factor study in Ga1-xInxAsySb1-y-GaSb and GaSb-Ga1-xInxAsySb1-y-GaSb quaternary alloy semiconductor spherical quantum dots

Electron g-factor study in Ga1-xInxAsySb1-y-GaSb and GaSb-Ga1-xInxAsySb1-y-GaSb quaternary alloy semiconductor spherical quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri